Mn as Surfactant for the Self-Assembling of AlxGa1–xN/GaN Layered Heterostructures

نویسندگان

  • Thibaut Devillers
  • Li Tian
  • Rajdeep Adhikari
  • Giulia Capuzzo
  • Alberta Bonanni
چکیده

The structural analysis of GaN and Al x Ga1-x N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process and in particular, the incorporation of Al, the morphology of the surface, and the plastic relaxation of Al x Ga1-x N on GaN. Moreover, the doping with Mn promotes the formation of layered Al x Ga1-x N/GaN superlattice-like heterostructures, which opens wide perspectives for controlling the segregation of ternary alloys during the crystal growth and for fostering the self-assembling of functional layered structures.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Charging effects in AlGaNÕGaN heterostructures probed using scanning capacitance microscopy

Charging effects in an AlxGa1 xN/GaN heterostructure field-effect transistor epitaxial layer structure have been studied using scanning capacitance microscopy. Voltages of 6 V applied between an AlxGa1 xN/GaN sample structure and a conducting proximal probe tip are found to create trapped charge in both doped and undoped heterostructures. Scanning capacitance measurements obtained over a wide r...

متن کامل

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures

We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n-AlXGa1−XN layer between an n-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying...

متن کامل

AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p–i–n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1 xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barri...

متن کامل

Local electronic properties of AlGaN / GaN heterostructures probed by scanning capacitance microscopy

Local electronic properties in AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structures are probed using scanning capacitance microscopy. Acquisition of scanning capacitance images over a wide range of bias voltages combined with theoretical analysis and numerical simulation allows the presence, detailed nature, and possible structural origins of nanometerto micron-scale...

متن کامل

Thermal conduction in AlxGa1−xN alloys and thin films

We report on experimental and theoretical investigation of thermal conduction in AlxGa1−xN alloys. A focus of this study is on understanding the effect of the Al mass fraction x and temperature on thermal conductivity in AlxGa1−xN thin films. The thermal conductivity of a set of AlxGa1−xN thin films as well as a pure GaN sample was measured using the differential 3v technique in the temperature...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 15  شماره 

صفحات  -

تاریخ انتشار 2015